Invention Application
- Patent Title: NON-VOLATILE MEMORY WITH FAST MULTI-LEVEL PROGRAM VERIFY
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Application No.: US17329304Application Date: 2021-05-25
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Publication No.: US20220383965A1Publication Date: 2022-12-01
- Inventor: Xiang Yang , Huai-Yuan Tseng , Deepanshu Dutta
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/26 ; G11C11/56

Abstract:
To improve programming performance for a non-volatile memory , the verification of multiple programming levels can be performed based on a single discharge of a sensing capacitor through a selected memory cell by using different voltage levels on a second plate of the sensing capacitor: after discharging a first plate of the sensing capacitor through the selected memory cell, a result amount of charge is trapped on the first plate, which is then used to set first and second control gate voltages on a sensing transistor whose control gate is connected to the first place of the sensing capacitor based on respectively setting the second plate of the sensing capacitor to first and second voltage levels. To further improve programming performance, when the non-volatile memory stores in a multistate format, after the next to highest data state finishes programming, the next programming pulse can use a larger step size.
Public/Granted literature
- US11532370B1 Non-volatile memory with fast multi-level program verify Public/Granted day:2022-12-20
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