- 专利标题: METHODS OF MANUFACTURING FUSIBLE STRUCTURES
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申请号: US17885321申请日: 2022-08-10
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公开(公告)号: US20220384339A1公开(公告)日: 2022-12-01
- 发明人: Shao-Ting WU , Meng-Sheng CHANG , Shao-Yu CHOU , Chung-I HUANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/525
- IPC分类号: H01L23/525 ; H01L27/112
摘要:
A method (fabricating a fusible structure) includes forming a metal line that extends in a first direction, the forming a metal line including: configuring the mask such that the metal line has a first portion that is between a second portion and a third portion; and using an optical proximity correction technique with a mask so that the first portion has a first thickness that is thinner than a second thickness of each of the second portion and the third portion; and forming a first dummy structure proximal to the metal line and aligned with the first portion relative to the first direction.