Invention Application
- Patent Title: Pre-Resist Island Forming Via Method and Apparatus
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Application No.: US17333837Application Date: 2021-05-28
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Publication No.: US20220384372A1Publication Date: 2022-12-01
- Inventor: Kuan-Hsiang Mao , Wen Hung Huang , Che Ming Fang , Yufu Liu
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C09D5/24 ; C09D179/04 ; C09D179/08

Abstract:
A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.
Public/Granted literature
- US11640947B2 Pre-resist island forming via method and apparatus Public/Granted day:2023-05-02
Information query
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