公开(公告)号：US20240194486A1

公开(公告)日：2024-06-13

申请号：US18444826

申请日：2024-02-19

申请人： NXP B.V.

发明人： Kuan-Hsiang Mao ,  Wen Hung Huang ,  Che Ming Fang ,  Yufu Liu

IPC分类号： H01L21/283 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L21/283 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/05558 ,  H01L2924/3511

摘要： A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.

公开(公告)号：US20230187211A1

公开(公告)日：2023-06-15

申请号：US17546449

申请日：2021-12-09

申请人： NXP B.V.

发明人： Kuan-Hsiang Mao ,  Wen Hung Huang ,  Che Ming Fang ,  Yufu Liu

IPC分类号： H01L21/283 ,  H01L23/00 ,  H01L21/78

CPC分类号： H01L21/283 ,  H01L24/03 ,  H01L24/11 ,  H01L21/78 ,  H01L24/05 ,  H01L2224/02331 ,  H01L2224/0231 ,  H01L2224/05558 ,  H01L2924/3511

摘要： A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.

公开(公告)号：US11935753B2

公开(公告)日：2024-03-19

申请号：US17546449

申请日：2021-12-09

申请人： NXP B.V.

发明人： Kuan-Hsiang Mao ,  Wen Hung Huang ,  Che Ming Fang ,  Yufu Liu

IPC分类号： H01L21/283 ,  H01L21/78 ,  H01L23/00

CPC分类号： H01L21/283 ,  H01L21/78 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/05558 ,  H01L2924/3511

摘要： A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.

公开(公告)号：US20240030173A1

公开(公告)日：2024-01-25

申请号：US17867853

申请日：2022-07-19

申请人： NXP B.V.

发明人： Che Ming Fang ,  Kuan-Hsiang Mao ,  Yufu Liu ,  Wen Hung Huang

IPC分类号： H01L23/00

CPC分类号： H01L24/20 ,  H01L24/13 ,  H01L24/11 ,  H01L24/19 ,  H01L24/73 ,  H01L2224/13027 ,  H01L2224/11849 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/211 ,  H01L2224/214 ,  H01L2224/73101

摘要： An IC package includes one or more microelectronic devices, a plurality of package bumps disposed at a first side, and a metal structure electrically connecting at least a first device contact pad of a first microelectronic device and at least a first package bump of the plurality of package bumps. The metal structure includes an RDL trace extending between a first region aligned with the first device contact pad and a second region aligned with the first package bump, wherein the first package bump is mechanically and electrically connected directly to the second region of the RDL trace. The metal structure further includes a first via extending between the first region of the RDL trace and the first device contact pad and further includes a set of one or more support studs extending from the second region to a support surface facing the first side.

公开(公告)号：US11640947B2

公开(公告)日：2023-05-02

申请号：US17333837

申请日：2021-05-28

申请人： NXP B.V.

发明人： Kuan-Hsiang Mao ,  Wen Hung Huang ,  Che Ming Fang ,  Yufu Liu

IPC分类号： H01L23/00 ,  C09D5/24 ,  C09D179/04 ,  C09D179/08 ,  G03F7/09

摘要： A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.

公开(公告)号：US20230187299A1

公开(公告)日：2023-06-15

申请号：US17546398

申请日：2021-12-09

申请人： NXP B.V.

发明人： Kuan-Hsiang Mao ,  Che Ming Fang ,  Yufu Liu ,  Wen Hung Huang

IPC分类号： H01L23/31 ,  H01L21/78 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/3171 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1191 ,  H01L2224/05024 ,  H01L2224/13022

摘要： A method for manufacturing a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices. Each integrated circuit device extends into the semiconductor wafer to a first depth. Prior to singulation of the integrated circuit devices on the semiconductor wafer, the method further includes forming a cut between the integrated circuit devices. The cut extends to at least the first depth, but does not extend completely through the semiconductor wafer. The cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on each integrated circuit device, a passivation layer on a top surface and on the edges.

公开(公告)号：US20220384372A1

公开(公告)日：2022-12-01

申请号：US17333837

申请日：2021-05-28

申请人： NXP B.V.

发明人： Kuan-Hsiang Mao ,  Wen Hung Huang ,  Che Ming Fang ,  Yufu Liu

IPC分类号： H01L23/00 ,  C09D5/24 ,  C09D179/04 ,  C09D179/08

摘要： A packaging semiconductor device, such as a fan-out Wafer-Level Packaging (FOWLP) device, is fabricated by providing a semiconductor device (20) having conductive patterns (22) disposed on a first surface and then forming, on the conductive patterns, photoresist islands (24) having a first predetermined shape defined by a first critical width dimension and a minimum height dimension so that a subsequently-formed dielectric polymer layer (26) surrounds but does not cover each photoresist island (24), thereby allowing each photoresist island to be selectively removed from the one or more conductive patterns to form one or more via openings (28) in the dielectric polymer layer such that each via opening has a second predetermined shape which matches at least part of the first predetermined shape of the photoresist islands.