A memory cell is manufactured by: (a) forming a stack comprising a first layer made of a phase change material and a second layer made of a conductive material; (b) forming a mask on the stack covering only the memory cell location; and (c) etching portions of the stack not covered by the first mask. The formation of the mask covering only the memory cell location comprises defining a first mask extending in a row direction for each row of memory cell locations and then patterning the first mask in a column direction for each column of memory cell locations.