- 专利标题： HALF-BRIDGE CIRCUIT USING SEPARATELY PACKAGED GAN POWER DEVICES
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申请号： US17820829申请日： 2022-08-18
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公开(公告)号： US20220393481A1公开(公告)日： 2022-12-08
- 发明人: Daniel M. Kinzer , Santosh Sharma , Ju Jason Zhang
- 申请人： Navitas Semiconductor Limited
- 申请人地址： IE Dublin
- 专利权人： Navitas Semiconductor Limited
- 当前专利权人： Navitas Semiconductor Limited
- 当前专利权人地址： IE Dublin
- 主分类号： H02J7/00
- IPC分类号： H02J7/00 ; H01L23/495 ; H01L27/02 ; H01L23/62 ; H02M1/088 ; H02M3/158 ; H03K3/012 ; H01L29/20 ; H03K17/10 ; H03K19/0185 ; H01L25/07 ; H02M3/157 ; H03K3/356 ; H01L27/088 ; H01L23/528 ; H01L29/10 ; H01L29/40 ; H01L29/417
摘要：
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
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