- 专利标题： POWER AMPLIFIER MODULES INCLUDING SEMICONDUCTOR RESISTOR AND TANTALUM NITRIDE TERMINATED THROUGH WAFER VIA
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申请号： US17820497申请日： 2022-08-17
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公开(公告)号： US20220393653A1公开(公告)日： 2022-12-08
- 发明人: Peter J. Zampardi, JR. , Hongxiao Shao , Tin Myint Ko , Matthew Thomas Ozalas , Hong Shen , Mehran Janani , Jens Albrecht Riege , Hsiang-Chih Sun , David Steven Ripley , Philip John Lehtola
- 申请人： Skyworks Solutions, Inc.
- 申请人地址： US CA Irvine
- 专利权人： Skyworks Solutions, Inc.
- 当前专利权人： Skyworks Solutions, Inc.
- 当前专利权人地址： US CA Irvine
- 主分类号： H03F3/213
- IPC分类号： H03F3/213 ; H03F3/19 ; H03F1/02 ; H03F3/21 ; H03F3/195 ; H01L23/00 ; H01L21/768 ; H03F3/24 ; H01L23/552 ; H01L29/36 ; H01L29/66 ; H01L29/737 ; H01L29/812 ; H01L29/08 ; H01L29/205 ; H01L21/8252 ; H01L27/06 ; H01L23/498 ; H01L23/50 ; H03F3/60 ; H01L23/66 ; H01L29/20 ; H01L23/48 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L21/8249 ; H01L21/66 ; H01L23/31 ; H01L23/522
摘要：
One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.
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