公开(公告)号：US09520835B2

公开(公告)日：2016-12-13

申请号：US14686585

申请日：2015-04-14

申请人： Skyworks Solutions, Inc.

发明人： Tin Myint Ko ,  Philip John Lehtola ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Hongxiao Shao ,  Peter J. Zampardi, Jr.

IPC分类号： H03F3/195 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H03F3/213 ,  H03F3/187 ,  H03F3/347 ,  H03F3/45 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 本公开的一个方面是功率放大器模块，其包括具有功率放大器和无源部件的第一管芯，所述功率放大器包括具有集电极的双极晶体管，邻接所述集电极的基极和发射极，所述集电极具有掺杂 在与碱的界面处浓度为至少约3×1016cm-3，集电体也具有掺杂浓度从基底增加的分级; 以及第二管芯，其包括偏置电路，所述偏置电路被配置为至少部分地基于所述第一管芯的无源部件的电特性的指示来产生偏置信号，并将所述偏置信号提供给所述功率放大器。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US09287226B2

公开(公告)日：2016-03-15

申请号：US14538265

申请日：2014-11-11

申请人： Skyworks Solutions, Inc.

发明人： Weimin Sun ,  Peter J. Zampardi, Jr. ,  Hongxiao Shao

IPC分类号： H01L29/00 ,  H01L29/80 ,  H01L23/00 ,  H01L23/64 ,  H01L23/66 ,  H01L23/495 ,  H01L23/498

CPC分类号： H01L24/09 ,  H01L23/4952 ,  H01L23/49838 ,  H01L23/642 ,  H01L23/66 ,  H01L24/03 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6605 ,  H01L2224/0346 ,  H01L2224/095 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/49111 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/19011 ,  H01L2924/30101 ,  H01L2924/00 ,  H01L2224/45099

摘要： To reduce the radio frequency (RF) losses associated with high RF loss plating, such as, for example, Nickel/Palladium/Gold (Ni/Pd/Au) plating, an on-die passive device, such as a capacitor, resistor, or inductor, associated with a radio frequency integrated circuit (RFIC) is placed in an RF upper signal path with respect to the RF signal output of the RFIC. By placing the on-die passive device in the RF upper signal path, the RF current does not directly pass through the high RF loss plating material of the passive device bonding pad.

摘要翻译： 为了减少与高RF损耗电镀相关的射频（RF）损耗，例如镍/钯/金（Ni / Pd / Au）电镀，诸如电容器，电阻器等的裸片无源器件， 或与电射频集成电路（RFIC）相关联的电感器被放置在相对于RFIC的RF信号输出的RF上信号路径中。 通过将片上无源器件放置在RF上信号路径中，RF电流不直接通过无源器件焊盘的高RF损耗电镀材料。

公开(公告)号：US20150326181A1

公开(公告)日：2015-11-12

申请号：US14686559

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US08896091B2

公开(公告)日：2014-11-25

申请号：US14189699

申请日：2014-02-25

申请人： Skyworks Solutions, Inc.

发明人： Weimin Sun ,  Peter J. Zampardi, Jr. ,  Hongxiao Shao

IPC分类号： H01L29/00 ,  H01L29/80 ,  H01L23/66 ,  H01L23/495 ,  H01L23/00 ,  H01L23/64 ,  H01L23/498

CPC分类号： H01L24/09 ,  H01L23/4952 ,  H01L23/49838 ,  H01L23/642 ,  H01L23/66 ,  H01L24/03 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6605 ,  H01L2224/0346 ,  H01L2224/095 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/49111 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/19011 ,  H01L2924/30101 ,  H01L2924/00 ,  H01L2224/45099

摘要： To reduce the radio frequency (RF) losses associated with high RF loss plating, such as, for example, Nickel/Palladium/Gold (Ni/Pd/Au) plating, an on-die passive device, such as a capacitor, resistor, or inductor, associated with a radio frequency integrated circuit (RFIC) is placed in an RF upper signal path with respect to the RF signal output of the RFIC. By placing the on-die passive device in the RF upper signal path, the RF current does not directly pass through the high RF loss plating material of the passive device bonding pad.

摘要翻译： 为了减少与高RF损耗电镀相关的射频（RF）损耗，例如镍/钯/金（Ni / Pd / Au）电镀，诸如电容器，电阻器等的裸片无源器件， 或与电射频集成电路（RFIC）相关联的电感器被放置在相对于RFIC的RF信号输出的RF上信号路径中。 通过将片上无源器件放置在RF上信号路径中，RF电流不直接通过无源器件焊盘的高RF损耗电镀材料。

公开(公告)号：US20130344825A1

公开(公告)日：2013-12-26

申请号：US13917552

申请日：2013-06-13

申请人： Skyworks Solutions, Inc.

发明人： David Steven Ripley ,  Philip John Lehtola ,  Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas

IPC分类号： H03F3/21 ,  H04B1/38

CPC分类号： H03F3/195 ,  H01L21/8252 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/20 ,  H01L29/7304 ,  H01L29/7371 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/3025 ,  H03F1/302 ,  H03F3/191 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/18 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/555 ,  H04B1/3827 ,  H04B1/40 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

摘要翻译： 本公开涉及一种用于偏置功率放大器的系统。 该系统可以包括第一管芯，其包括功率放大器电路和具有取决于第一管芯的一个或多个条件的电特性的无源部件。 此外，该系统可以包括第二管芯，其包括偏置信号产生电路，该偏置信号产生电路被配置为至少部分地基于第一管芯的无源部件的电性能的测量来产生偏置信号。

公开(公告)号：US20190158045A1

公开(公告)日：2019-05-23

申请号：US16104114

申请日：2018-08-16

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas ,  David Steven Ripley ,  Philip John Lehtola

IPC分类号： H03F3/213 ,  H01L21/768 ,  H01L23/48 ,  H01L21/66 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L23/31 ,  H01L23/498 ,  H01L29/08 ,  H01L29/20 ,  H01L23/00 ,  H03F3/60 ,  H01L23/50 ,  H01L23/66 ,  H01L23/552 ,  H01L27/06 ,  H01L21/8252 ,  H01L29/205 ,  H01L29/812 ,  H01L29/737 ,  H01L29/66 ,  H01L29/36 ,  H03F3/24 ,  H01L23/522 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F1/02

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm−3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US10090812B2

公开(公告)日：2018-10-02

申请号：US15482321

申请日：2017-04-07

申请人： Skyworks Solutions, Inc.

发明人： Hardik Bhupendra Modi ,  Sandra Louise Petty-Weeks ,  Hongxiao Shao ,  Weimin Sun ,  Peter J. Zampardi, Jr. ,  Guohao Zhang

IPC分类号： H03F3/14 ,  H03F3/213 ,  H01L29/20 ,  H01L23/498 ,  H01L21/48 ,  H01L29/08 ,  H01L23/31 ,  H01L21/8249 ,  H01L21/78 ,  H01L21/56 ,  H01L21/66 ,  H01L23/48 ,  H01L21/768 ,  H03F3/19 ,  H03F3/24 ,  H01L29/36 ,  H01L29/66 ,  H01L29/812 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L23/50 ,  H03F3/195 ,  H03F3/60 ,  H03F1/02 ,  H03F3/21 ,  H03F3/45 ,  H01L29/737 ,  H01L29/06 ,  H01L29/10 ,  H01L29/8605 ,  H01L27/092 ,  H03F3/187 ,  H03F3/347

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier die, a first bonding pad on a conductive trace, and a second bonding pad on a conductive trace. The die includes an on-die passive device and a power amplifier. The first bonding pad is electrically connected to the on-die passive device by a first wire bond. The second bonding pad is in a conductive path between the first bonding pad and a radio frequency output of the power amplifier module. The second bonding pad includes a nickel layer having a thickness that is less than 0.5 um, a palladium layer over the nickel layer, and a gold layer over the palladium layer and bonded to a second wire bond that is electrically connected to an output of the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20170324136A1

公开(公告)日：2017-11-09

申请号：US15661470

申请日：2017-07-27

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Weimin Sun ,  Xiaofang Mu ,  Hongxiao Shao

IPC分类号： H01P5/18 ,  H03F3/24 ,  H03F3/68

CPC分类号： H01P5/18 ,  H01P5/185 ,  H01P5/187 ,  H03F3/24 ,  H03F3/68

摘要： Directional couplers having a chain configuration and devices incorporating same. In some implementations, a chain coupler assembly can include a plurality of couplers each having a driver arm configured to route a respective RF signal and a coupled arm disposed physically proximate to the driver arm to detect a portion of power of the respective RF signal. Portions of the driver arm and the coupler arm can form an overlapping region. At least one of the driver arm and the coupled arm can have a non-straight arm shape, and the coupled arms of the plurality of couplers can be connected together in series.

公开(公告)号：US20170019076A1

公开(公告)日：2017-01-19

申请号：US15216621

申请日：2016-07-21

申请人： Skyworks Solutions, Inc.

发明人： David Steven Ripley ,  Philip John Lehtola ,  Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas

IPC分类号： H03F3/195 ,  H03F3/213 ,  H01L29/73 ,  H01L29/20 ,  H01L27/06 ,  H01L23/66

CPC分类号： H03F3/195 ,  H01L21/8252 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/20 ,  H01L29/7304 ,  H01L29/7371 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/3025 ,  H03F1/302 ,  H03F3/191 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/18 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/555 ,  H04B1/3827 ,  H04B1/40 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

摘要翻译： 本公开涉及一种用于偏置功率放大器的系统。 该系统可以包括第一管芯，其包括功率放大器电路和具有取决于第一管芯的一个或多个条件的电特性的无源部件。 此外，该系统可以包括第二管芯，其包括偏置信号产生电路，该偏置信号产生电路被配置为至少部分地基于第一管芯的无源部件的电性能的测量来产生偏置信号。

公开(公告)号：US09419567B2

公开(公告)日：2016-08-16

申请号：US13917552

申请日：2013-06-13

申请人： Skyworks Solutions, Inc.

发明人： David Steven Ripley ,  Philip John Lehtola ,  Peter J. Zampardi, Jr. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas

IPC分类号： H03F3/21 ,  H03F1/52 ,  H04B1/3827 ,  H01L23/66 ,  H03F1/30 ,  H03F3/191 ,  H01L23/552 ,  H01L25/16 ,  H01L27/06 ,  H01L29/737 ,  H01L29/8605 ,  H01L21/8252

CPC分类号： H03F3/195 ,  H01L21/8252 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/20 ,  H01L29/7304 ,  H01L29/7371 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/3025 ,  H03F1/302 ,  H03F3/191 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/18 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/555 ,  H04B1/3827 ,  H04B1/40 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

摘要翻译： 本公开涉及一种用于偏置功率放大器的系统。 该系统可以包括第一管芯，其包括功率放大器电路和具有取决于第一管芯的一个或多个条件的电特性的无源部件。 此外，该系统可以包括第二管芯，其包括偏置信号产生电路，该偏置信号产生电路被配置为至少部分地基于第一管芯的无源部件的电性能的测量来产生偏置信号。