- 专利标题: STRAIN-INDUCED SHIFT MITIGATION IN SEMICONDUCTOR PACKAGES
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申请号: US17822960申请日: 2022-08-29
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公开(公告)号: US20220415824A1公开(公告)日: 2022-12-29
- 发明人: Gregory Thomas Ostrowicki , Amit Sureshkumar Nangia
- 申请人: TEXAS INSTRUMENTS INCORPORATED
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/64 ; H01L23/31 ; H01L21/56
摘要:
A semiconductor package includes a semiconductor die including a semiconductor substrate, a strain-sensitive component located within or over a metallization layer of the semiconductor die, wherein a parameter of the strain-sensitive component exhibits a longitudinal shift due to a longitudinal strain and a transverse shift due to a transverse strain, and a mold compound covering the semiconductor die and the strain-sensitive component. The semiconductor package, including the semiconductor die and the mold compound, defines an orthogonal package-induced strain ratio on the strain-sensitive component on the semiconductor die surface. The strain-sensitive component is located such that the longitudinal shift due to package-induced strains offsets the transverse shift due to the package-induced strains.
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