Invention Application
- Patent Title: SEMICONDUCTOR DEVICE INCLUDING A POWER MOSFET AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17901416Application Date: 2022-09-01
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Publication No.: US20220416079A1Publication Date: 2022-12-29
- Inventor: Machiko SATO , Akihiro SHIMOMURA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2019-182238 20191002
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/10
Abstract:
A semiconductor device has an impurity region covering a bottom of a gate trench and a column region. A bottom of the column region is deeper than a bottom of the gate trench. The impurity region is arranged between the gate trench and the column region. This structure can improve the characteristics of the semiconductor device.
Public/Granted literature
- US11824113B2 Manafacturing method for power MOSFET semiconductor device with improved breakdown voltage Public/Granted day:2023-11-21
Information query
IPC分类:
