Invention Application
- Patent Title: Memory Array Gate Structures
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Application No.: US17884285Application Date: 2022-08-09
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Publication No.: US20220416085A1Publication Date: 2022-12-29
- Inventor: Chun-Chieh Lu , Sai-Hooi Yeong , Bo-Feng Young , Yu-Ming Lin , Chih-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G11C11/22 ; H01L27/11587 ; H01L29/24 ; H01L27/11597 ; H01L29/786 ; H01L29/04 ; H01L29/66 ; H01L27/1159
Abstract:
A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.
Public/Granted literature
- US12051750B2 Memory array gate structures Public/Granted day:2024-07-30
Information query
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