Invention Application
- Patent Title: SELECTIVE FILM FORMATION USING A SELF-ASSEMBLED MONOLAYER
-
Application No.: US17854930Application Date: 2022-06-30
-
Publication No.: US20230009688A1Publication Date: 2023-01-12
- Inventor: Dina H. Triyoso , Lior Huli , Corey Lemley , Robert D. Clark , Gerrit Leusink
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/321 ; H01L21/3213 ; H01L21/687
Abstract:
A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.
Information query
IPC分类:
