Invention Application
- Patent Title: BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES
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Application No.: US17371245Application Date: 2021-07-09
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Publication No.: US20230012147A1Publication Date: 2023-01-12
- Inventor: Chia-Hung CHU , Ding-Kang SHIH , Keng-Chu LIN , Pang-Yen TSAI , Sung-Li WANG , Shuen-Shin LIANG , Tsungyu HUNG , Hsu-Kai CHANG
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L29/786 ; H01L29/06 ; H01L29/40 ; H01L21/285
Abstract:
The present disclosure describes a method to form a semiconductor device with backside contact structures. The method includes forming a semiconductor device on a first side of a substrate. The semiconductor device includes a source/drain (S/D) region. The method further includes etching a portion of the S/D region on a second side of the substrate to form an opening and forming an epitaxial contact structure on the S/D region in the opening. The second side is opposite to the first side. The epitaxial contact structure includes a first portion in contact with the S/D region in the opening and a second portion on the first portion. A width of the second portion is larger than the first portion.
Public/Granted literature
Information query
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