Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A first set of spacers are formed on the sidewalls of a bottom electrode. A reference layer is formed on the spacers and the bottom electrode. A second set of spacers are formed on the sidewalls of the first set of spacers and the reference layer. A tunnel barrier is formed on the reference layer and the second set of spacers. A free layer is formed on the tunnel barrier, where a width of the free layer is greater than a width of the reference layer. A metal hardmask is formed on the free layer. A third set of spacers are formed on the sidewalls of the metal hardmask, the free layer, the tunnel barrier, and the second set of spacers.