- 专利标题： METAL OXIDE DIRECTIONAL REMOVAL
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申请号： US17376337申请日： 2021-07-15
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公开(公告)号： US20230015080A1公开(公告)日： 2023-01-19
- 发明人: Baiwei Wang , Rohan Puligoru Reddy , Xiaolin C. Chen , Zhenjiang Cui , Anchuan Wang
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01J37/32
摘要：
Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.
公开/授权文献
- US2145410A Method of shaping heel parts of shoe uppers 公开/授权日：1939-01-31
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