Invention Application
- Patent Title: METHOD FOR ION IMPLANTATION UNIFORMITY CONTROL
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Application No.: US17684876Application Date: 2022-03-02
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Publication No.: US20230016619A1Publication Date: 2023-01-19
- Inventor: Tien-Shun Chang , Yu-Kang Liu , Su-Hao Liu , Huicheng Chang , Yee-Chia Yeo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/304

Abstract:
A method includes moving a plurality of sensors along a translation path with respect to an ion beam, acquiring sensor signals produced by the plurality of sensors, converting the acquired sensor signals into a data set representative of a two-dimensional (2D) profile of the ion beam, generating a plurality of first one-dimensional (1D) profiles of the ion beam from the data set, generating a plurality of second 1D profiles of the ion beam by spatially inverting each of the plurality of first 1D profiles, generating a plurality of third 1D profiles of the ion beam by superposing first current density values of each of the plurality of first 1D profiles with second current density values of a corresponding one of the plurality of second 1D profiles and determining whether to continue an implantation process with the ion beam in accordance with the plurality of third 1D profiles.
Information query