公开(公告)号：US20230016619A1

公开(公告)日：2023-01-19

申请号：US17684876

申请日：2022-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tien-Shun Chang ,  Yu-Kang Liu ,  Su-Hao Liu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01J37/317 ,  H01J37/304

Abstract: A method includes moving a plurality of sensors along a translation path with respect to an ion beam, acquiring sensor signals produced by the plurality of sensors, converting the acquired sensor signals into a data set representative of a two-dimensional (2D) profile of the ion beam, generating a plurality of first one-dimensional (1D) profiles of the ion beam from the data set, generating a plurality of second 1D profiles of the ion beam by spatially inverting each of the plurality of first 1D profiles, generating a plurality of third 1D profiles of the ion beam by superposing first current density values of each of the plurality of first 1D profiles with second current density values of a corresponding one of the plurality of second 1D profiles and determining whether to continue an implantation process with the ion beam in accordance with the plurality of third 1D profiles.