Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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Application No.: US17375000Application Date: 2021-07-14
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Publication No.: US20230017264A1Publication Date: 2023-01-19
- Inventor: Yu-Lung Wang , Yao-Ting Tsai , Jian-Ting Chen , Yuan-Huang Wei
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung City
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung City
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/11521 ; H01L29/417 ; H01L21/311 ; H01L29/66 ; H01L29/40
Abstract:
Provided is a semiconductor device including a substrate, multiple first gate structures, and a protective structure. The substrate includes a first region and a second region. The first gate structures are disposed on the substrate in the first region. The protective structure conformally covers a sidewall of one of the first gate structures adjacent to the second region. The protective structure includes a lower portion and an upper portion disposed on the lower portion. The lower portion and the upper portion have different dielectric materials. A method of forming a semiconductor device is also provided.
Public/Granted literature
- US12040412B2 Semiconductor device and method of forming the same Public/Granted day:2024-07-16
Information query
IPC分类:
