公开(公告)号：US12040412B2

公开(公告)日：2024-07-16

申请号：US17375000

申请日：2021-07-14

Applicant: Winbond Electronics Corp.

Inventor： Yu-Lung Wang ,  Yao-Ting Tsai ,  Jian-Ting Chen ,  Yuan-Huang Wei

IPC: H01L29/78 ,  H01L21/311 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/788 ,  H10B41/30

CPC classification number: H01L29/788 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/401 ,  H01L29/41775 ,  H01L29/6653 ,  H10B41/30

Abstract: Provided is a semiconductor device including a substrate, multiple first gate structures, and a protective structure. The substrate includes a first region and a second region. The first gate structures are disposed on the substrate in the first region. The protective structure conformally covers a sidewall of one of the first gate structures adjacent to the second region. The protective structure includes a lower portion and an upper portion disposed on the lower portion. The lower portion and the upper portion have different dielectric materials. A method of forming a semiconductor device is also provided.

公开(公告)号：US20230017264A1

公开(公告)日：2023-01-19

申请号：US17375000

申请日：2021-07-14

Applicant: Winbond Electronics Corp.

Inventor： Yu-Lung Wang ,  Yao-Ting Tsai ,  Jian-Ting Chen ,  Yuan-Huang Wei

IPC: H01L29/788 ,  H01L27/11521 ,  H01L29/417 ,  H01L21/311 ,  H01L29/66 ,  H01L29/40

Abstract: Provided is a semiconductor device including a substrate, multiple first gate structures, and a protective structure. The substrate includes a first region and a second region. The first gate structures are disposed on the substrate in the first region. The protective structure conformally covers a sidewall of one of the first gate structures adjacent to the second region. The protective structure includes a lower portion and an upper portion disposed on the lower portion. The lower portion and the upper portion have different dielectric materials. A method of forming a semiconductor device is also provided.