Invention Application
- Patent Title: SEMICONDUCTOR DIE WITH STEPPED SIDE SURFACE
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Application No.: US17373958Application Date: 2021-07-13
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Publication No.: US20230017286A1Publication Date: 2023-01-19
- Inventor: Rongwei Zhang , Chien Hao Wang , Bob Lee
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/48 ; H01L23/00 ; H01L21/56 ; H01L23/31 ; H01L21/78

Abstract:
A semiconductor device includes a substrate and a semiconductor die including an active surface with bond pads, an opposite inactive surface, and stepped side surfaces extending between the active surface and the inactive surface. The stepped side surfaces include a first planar surface extending from the inactive surface towards the active surface, a second planar surface extending from the active surface towards the inactive surface, and a side surface offset between the first planar surface and the second planar surface. The semiconductor device further includes an adhesive layer covering at least a portion of a surface area of the second surface and attaching the semiconductor die to the substrate.
Public/Granted literature
- US12062596B2 Semiconductor die with stepped side surface Public/Granted day:2024-08-13
Information query
IPC分类: