Invention Application
- Patent Title: METROLOGY METHOD AND ASSOCIATED METROLOGY AND LITHOGRAPHIC APPARATUSES
-
Application No.: US17784566Application Date: 2020-12-03
-
Publication No.: US20230017491A1Publication Date: 2023-01-19
- Inventor: Patricius Aloysius Jacobus TINNEMANS , Igor Matheus Petronalla AARTS , Kaustuve BHATTACHARYYA , Ralph BRINKHOF , Leendert Jan KARSSEMEIJER , Stefan Carolus Jacobus A KEIJ , Haico Victor KOK , Simon Gijsbert Josephus MATHIJSSEN , Henricus Johannes Lambertu MEGENS , Samee Ur REHMAN
- Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
- Applicant Address: NL Veldhoven; NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.,ASML HOLDING N.V.
- Current Assignee: ASML NETHERLANDS B.V.,ASML HOLDING N.V.
- Current Assignee Address: NL Veldhoven; NL Veldhoven
- Priority: EP19216683.3 20191216
- International Application: PCT/EP2020/084387 WO 20201203
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F9/00

Abstract:
A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.
Public/Granted literature
- US12032299B2 Metrology method and associated metrology and lithographic apparatuses Public/Granted day:2024-07-09
Information query
IPC分类: