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    POSITION MEASURING METHOD OF AN ALIGNMENT TARGET
    2.
    发明申请
    POSITION MEASURING METHOD OF AN ALIGNMENT TARGET 审中-公开

    公开(公告)号：US20180329307A1

    公开(公告)日：2018-11-15

    申请号：US15777162

    申请日：2016-11-29

    Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

    Inventor： Ralph BRINKHOF ,  Simon Gijsbert Josephus MATHIJSSEN ,  Maikel Robert GOOSEN ,  Vassili DEMERGIS ,  Bartolokeus Petrus RIJPERS

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70141 ,  G03F9/7046 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

    Abstract: A method of measuring a position of an alignment target on a substrate using an optical system. The method includes measuring a sub-segmented target by illuminating the sub-segmented target with radiation and detecting radiation diffracted by the sub-segmented target using a detector system to obtain signals containing positional information of the one sub-segmented target. The sub-segmented target has structures arranged periodically in at least a first direction, at least some of the structures including smaller sub-structures, and each sub-segmented target is formed with a positional offset between the structures and the sub-structures that is a combination of both known and unknown components. The signals, together with information on differences between known offsets of the sub-segmented target are used to calculate a measured position of an alignment target which is corrected for the unknown component of the positional offset.

    METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES
    3.
    发明公开
    METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES 审中-公开

    公开(公告)号：US20240192610A1

    公开(公告)日：2024-06-13

    申请号：US18437564

    申请日：2024-02-09

    Applicant: ASML Netherlands B.V.

    Inventor： Gijs TEN HAAF ,  Everhardus Cornelis MOS ,  Hans Erik KATTOUW ,  Ralph BRINKHOF

    IPC: G03F7/00

    CPC classification number: G03F7/705 ,  G03F7/70633

    Abstract: Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.

    METHOD OF MEASURING AN ALIGNMENT MARK OR AN ALIGNMENT MARK ASSEMBLY, ALIGNMENT SYSTEM, AND LITHOGRAPHIC TOOL
    9.
    发明申请
    METHOD OF MEASURING AN ALIGNMENT MARK OR AN ALIGNMENT MARK ASSEMBLY, ALIGNMENT SYSTEM, AND LITHOGRAPHIC TOOL 有权

    公开(公告)号：US20220187722A1

    公开(公告)日：2022-06-16

    申请号：US17442951

    申请日：2020-02-25

    Applicant: ASML Netherlands B.V.

    Inventor： Franciscus Godefridus Casper BIJNEN ,  Ralph BRINKHOF

    IPC: G03F9/00

    Abstract: The invention provides a method of measuring an alignment mark or an alignment mark assembly, wherein the alignment mark comprises grid features extending in at least two directions, the method comprising: measuring the alignment mark or alignment mark assembly using an expected location of the alignment mark or alignment mark assembly, determining a first position of the alignment mark or alignment mark assembly in a first direction, determining a second position of the alignment mark or alignment mark assembly in a second direction, wherein the second direction is perpendicular to the first direction, determining a second direction scan offset between the expected location of the alignment mark or alignment mark assembly in the second direction and the determined second position, and correcting the first position on the basis of the second direction scan offset using at least one correction data set to provide a first corrected position.

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