公开(公告)号：US20230017491A1

公开(公告)日：2023-01-19

申请号：US17784566

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Igor Matheus Petronalla AARTS ,  Kaustuve BHATTACHARYYA ,  Ralph BRINKHOF ,  Leendert Jan KARSSEMEIJER ,  Stefan Carolus Jacobus A KEIJ ,  Haico Victor KOK ,  Simon Gijsbert Josephus MATHIJSSEN ,  Henricus Johannes Lambertu MEGENS ,  Samee Ur REHMAN

IPC: G03F7/20 ,  G03F9/00

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.