A FET device (100) is provided, the FET device including a substrate (102), a source body (120), a drain body (130) and a set of vertically spaced apart channel layers (150) extending between the source and drain body in a first direction along the substrate (102), the source body (120) comprising a common source body portion (122) arranged at a first lateral side of the set of channel layers (150) and a set of vertically spaced apart source prongs (124) protruding from the common source body portion (122) in a second direction along the substrate (102), transverse to the first direction, the drain body (130) comprising a common source body portion (132) arranged at the first lateral side of the set of channel layers (150) and a set of drain prongs (134) protruding from the common drain body portion (132) in the second direction; and a gate body (140) comprising a common gate body portion (142) arranged at a second lateral side of the channel layer (150), opposite the first lateral side, and a set of gate prongs (144) protruding from the common gate body gate portion (142) in a third direction along the substrate (102), opposite the first direction; wherein each channel layer (150) comprises a first side (150aa, 150ba) and an opposite second side (150ab, 150bb), the first side arranged in abutment with a topside or an underside of a pair of source and drain prongs (124a, 134a) and the second side (150ab, 150bb) facing a gate prong (144a, 144b).