Invention Publication
- Patent Title: HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL
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Application No.: US17542485Application Date: 2021-12-05
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Publication No.: US20230178642A1Publication Date: 2023-06-08
- Inventor: Cezar Bogdan Zota , Thomas Morf , Eunjung Cha , Peter Mueller
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY ARMONK
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY ARMONK
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/12 ; H01L29/66
Abstract:
A superconductor transistor structure includes a source electrode and a drain electrode on a same plane as the source electrode. There is a channel region on top of the source and drain electrodes and configured to carry a current. A gate structure comprising a metallic material is on top of the channel region. The source and drain are located on a side that is opposite to that of the gate structure, with respect to the channel region.
Public/Granted literature
- US12191382B2 High electron mobility transistor with source and drain electrodes below the channel Public/Granted day:2025-01-07
Information query
IPC分类:
