Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a fin with a first end and a second end. In an embodiment, a first dielectric covers the first end of the fin, and a second dielectric covers the second end of the fin. In an embodiment, a gate structure is over the first end of the fin, where the gate structure is on a top surface of the fin and a top surface of the first dielectric.