Invention Publication
- Patent Title: FIELD EFFECT TRANSISTORS WITH DUAL FIELD PLATES
-
Application No.: US17645738Application Date: 2021-12-22
-
Publication No.: US20230197798A1Publication Date: 2023-06-22
- Inventor: JOHNATAN AVRAHAM KANTAROVSKY
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/423 ; H01L29/778 ; H01L21/76 ; H01L21/765 ; H01L29/66
Abstract:
A transistor structure is provided, the transistor structure comprising a source, a drain, and a gate between the source and the drain. The gate may have a top surface. A first field plate may be between the source and the drain. The first field plate may be L-shaped and having a vertical portion over a horizontal portion. A top surface of the vertical portion of the first field plate may be at least as high as the top surface of the gate. A second field plate, whereby the second field plate may be connected to the gate and the second field plate may partially overlap the horizontal portion of the first field plate.
Public/Granted literature
- US12255235B2 Field effect transistors with dual field plates Public/Granted day:2025-03-18
Information query
IPC分类:
