- 专利标题: ADAPTIVE CONTROL TO ACCESS CURRENT OF MEMORY CELL DESCRIPTION
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申请号: US16971053申请日: 2020-05-18
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公开(公告)号: US20230207004A1公开(公告)日: 2023-06-29
- 发明人: Marco Sforzin , Umberto Di Vincenzo
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 国际申请: PCT/IB2020/020024 2020.05.18
- 进入国家日期: 2020-08-19
- 主分类号: G11C13/00
- IPC分类号: G11C13/00
摘要:
Devices, systems and methods for adaptively controlling a reset current of a memory cell are described. A system comprises: a mirror circuit with one branch coupled with a top electrode of the memory cell and the other branch coupled with one end of a resistive reference, and wherein a bottom electrode of the memory cell is coupled to a reference potential, the other end of the resistive reference is provided with a first electric potential; a control circuit; and a feedback circuit for feeding an electric potential to the top electrode of the memory cell.
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