- 专利标题: SIMULTANEOUS CARBON NANOTUBE GROWTH, CATALYST REMOVAL, BORON NITRIDE NANOTUBE SHELL FORMATION METHOD FOR EUV PELLICLES
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申请号: US17749675申请日: 2022-05-20
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公开(公告)号: US20230236496A1公开(公告)日: 2023-07-27
- 发明人: Pei-Cheng HSU , Huan-Ling LEE , Hsin-Chang LEE , Chin-Hsiang LIN
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F1/64
- IPC分类号: G03F1/64 ; C01B32/162 ; C01B32/174
摘要:
A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, growing boron nitride nanotubes (BNNTs) to surround individual CNTs in a second reaction zone of the reactor downstream of the first reaction zone, thereby forming heterostructure nanotubes each including a CNT core and a BNNT shell, and collecting the heterostructure nanotubes on the filter membrane. The metal catalyst particles are partially or completely removed during growing the BNNTs.
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