公开(公告)号：US20250085623A1

公开(公告)日：2025-03-13

申请号：US18404776

申请日：2024-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Kun WANG

IPC: G03F1/62 ,  H01L21/027

Abstract: A pellicle comprising a pellicle membrane with improved stability to hydrogen plasma is provided. The pellicle membrane includes a network of a plurality of carbon nanotubes. At least one carbon nanotube of the plurality of carbon nanotubes is surrounded by a multilayer protective coating that includes a stress control layer and a hydrogen permeation barrier layer over the stress control layer. The stress control layer and the hydrogen permeation barrier layer independently include an Me-containing nitride or an Me-containing oxynitride with Me selected from the group consisting of Si, Ti, Y, Hf, Zr, Zn, Mo, Cr and combinations thereof. The Me-containing nitride or the Me-containing oxynitride in the stress control layer has a first Me concentration, and the Me-containing nitride or the Me-containing oxynitride in the hydrogen permeation barrier layer has a second Me concentration less than the first Me concentration.

公开(公告)号：US20180292744A1

公开(公告)日：2018-10-11

申请号：US16010118

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Hsuan-I WANG ,  Anthony YEN

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/2004

Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.

公开(公告)号：US20230236496A1

公开(公告)日：2023-07-27

申请号：US17749675

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F1/64 ,  C01B32/162 ,  C01B32/174

CPC classification number: G03F1/64 ,  C01B32/162 ,  C01B32/174 ,  B82Y40/00

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, growing boron nitride nanotubes (BNNTs) to surround individual CNTs in a second reaction zone of the reactor downstream of the first reaction zone, thereby forming heterostructure nanotubes each including a CNT core and a BNNT shell, and collecting the heterostructure nanotubes on the filter membrane. The metal catalyst particles are partially or completely removed during growing the BNNTs.

公开(公告)号：US20230229072A1

公开(公告)日：2023-07-20

申请号：US18188403

申请日：2023-03-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsiao-Chen WU ,  Pei-Cheng HSU

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82 ,  G03F1/48

Abstract: The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.

公开(公告)号：US20230161241A1

公开(公告)日：2023-05-25

申请号：US17749033

申请日：2022-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Wei-Hao LEE ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Ching-Fang YU

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

公开(公告)号：US20230152681A1

公开(公告)日：2023-05-18

申请号：US18151416

申请日：2023-01-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/24 ,  G03F1/22

Abstract: A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.

公开(公告)号：US20220146924A1

公开(公告)日：2022-05-12

申请号：US17579433

申请日：2022-01-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsiao-Chen WU ,  Pei-Cheng HSU

IPC: G03F1/24 ,  G03F1/80 ,  G03F1/40

Abstract: The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.

公开(公告)号：US20220137499A1

公开(公告)日：2022-05-05

申请号：US17331517

申请日：2021-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.

公开(公告)号：US20210373436A1

公开(公告)日：2021-12-02

申请号：US17109878

申请日：2020-12-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Hao-Ping CHENG ,  Ta-Cheng LIEN

IPC: G03F1/82 ,  G03F1/64

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

公开(公告)号：US20200057363A1

公开(公告)日：2020-02-20

申请号：US16534968

申请日：2019-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Ping-Hsun LIN ,  Shih-Che WANG ,  Hsin-Chang LEE

IPC: G03F1/22 ,  H01L21/027 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.