公开(公告)号：US20230161261A1

公开(公告)日：2023-05-25

申请号：US17745576

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Huan-Ling LEE ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F7/20

CPC classification number: G03F7/70033

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

公开(公告)号：US20250085623A1

公开(公告)日：2025-03-13

申请号：US18404776

申请日：2024-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Kun WANG

IPC: G03F1/62 ,  H01L21/027

Abstract: A pellicle comprising a pellicle membrane with improved stability to hydrogen plasma is provided. The pellicle membrane includes a network of a plurality of carbon nanotubes. At least one carbon nanotube of the plurality of carbon nanotubes is surrounded by a multilayer protective coating that includes a stress control layer and a hydrogen permeation barrier layer over the stress control layer. The stress control layer and the hydrogen permeation barrier layer independently include an Me-containing nitride or an Me-containing oxynitride with Me selected from the group consisting of Si, Ti, Y, Hf, Zr, Zn, Mo, Cr and combinations thereof. The Me-containing nitride or the Me-containing oxynitride in the stress control layer has a first Me concentration, and the Me-containing nitride or the Me-containing oxynitride in the hydrogen permeation barrier layer has a second Me concentration less than the first Me concentration.

公开(公告)号：US20230236496A1

公开(公告)日：2023-07-27

申请号：US17749675

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

IPC: G03F1/64 ,  C01B32/162 ,  C01B32/174

CPC classification number: G03F1/64 ,  C01B32/162 ,  C01B32/174 ,  B82Y40/00

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transferring the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, growing boron nitride nanotubes (BNNTs) to surround individual CNTs in a second reaction zone of the reactor downstream of the first reaction zone, thereby forming heterostructure nanotubes each including a CNT core and a BNNT shell, and collecting the heterostructure nanotubes on the filter membrane. The metal catalyst particles are partially or completely removed during growing the BNNTs.

公开(公告)号：US20240351881A1

公开(公告)日：2024-10-24

申请号：US18357950

申请日：2023-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Dung-Yue SU ,  Pei-Cheng HSU ,  Huan-Ling LEE ,  Hsin-Chang LEE

IPC: C01B32/168 ,  C01B32/162 ,  G03F1/62

CPC classification number: C01B32/168 ,  C01B32/162 ,  G03F1/62 ,  C01B2202/08

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transfer the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, promoting formation of bundles of nanotubes from the individual CNTs in a second zone of the reactor downstream of the first reaction zone. The bundled CNTs are then collected on the filter membrane.

公开(公告)号：US20210333717A1

公开(公告)日：2021-10-28

申请号：US17086299

申请日：2020-10-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Che HSIEH ,  Tzu-Yi WANG ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Huan-Ling LEE

IPC: G03F7/20 ,  H05G2/00 ,  G03F7/075 ,  G03F7/09

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

公开(公告)号：US20190146325A1

公开(公告)日：2019-05-16

申请号：US16128863

申请日：2018-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang HSUEH ,  Huan-Ling LEE ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F1/22 ,  G03F1/52 ,  G03F1/58 ,  G03F1/48

Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.