发明公开
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
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申请号: US18131511申请日: 2023-04-06
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公开(公告)号: US20230245697A1公开(公告)日: 2023-08-03
- 发明人: Noboru SHIBATA
- 申请人: Kioxia Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kioxia Corporation
- 当前专利权人: Kioxia Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP 14085018 2014.04.16
- 主分类号: G11C11/56
- IPC分类号: G11C11/56 ; G11C16/34 ; G11C16/10
摘要:
According to one embodiment, a semiconductor memory device includes a memory cell array, a data storage circuit and a control circuit. The data storage circuit holds first data to be written into the memory cell and holds 1 bit data calculated from the first data. The control circuit writes the data of n bits into the memory cell in a first write operation and then executes a second write operation. The control circuit carries out the following control in the second write operation. It reads data stored in the memory cell in the first write operation. It restores the first data based on the data read from the memory cell and the 1 bit data held in the data storage circuit. It writes the restored first data into the memory cell.
公开/授权文献
- US12094532B2 Semiconductor memory device 公开/授权日:2024-09-17
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