- 专利标题: QUANTUM DOTS, PRODUCTION METHOD THEREOF, AND COMPOSITE AND ELECTRONIC DEVICE INCLUDING THE SAME
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申请号: US18130453申请日: 2023-04-04
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公开(公告)号: US20230250333A1公开(公告)日: 2023-08-10
- 发明人: Jihyun MIN , Seon-Yeong KIM , Eun Joo JANG , Hyo Sook JANG , Soo Kyung KWON , Yong Wook KIM
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20180085495 2018.07.23
- 主分类号: C09K11/70
- IPC分类号: C09K11/70 ; C09K11/62 ; H01L29/12 ; C09K11/88
摘要:
A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
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