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公开(公告)号：US20230303924A1
公开(公告)日：2023-09-28
申请号：US18204465
申请日：2023-06-01
发明人： Jihyun MIN , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Ji-Yeong KIM , Eun Joo JANG , Sungwoo HWANG
IPC分类号： C09K11/88 , C09K11/02 , H10K50/115 , H10K59/38
CPC分类号： C09K11/883 , C09K11/02 , H10K50/115 , H10K59/38 , G02F2202/36 , B82Y40/00
摘要： A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.
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2.发明公开公开(公告)号：US20230250333A1
公开(公告)日：2023-08-10
申请号：US18130453
申请日：2023-04-04
发明人： Jihyun MIN , Seon-Yeong KIM , Eun Joo JANG , Hyo Sook JANG , Soo Kyung KWON , Yong Wook KIM
CPC分类号： C09K11/70 , C09K11/62 , H01L29/122 , C09K11/883 , H10K59/38
摘要： A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
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公开(公告)号：US20220025260A1
公开(公告)日：2022-01-27
申请号：US17497208
申请日：2021-10-08
发明人： Jihyun MIN , Eun Joo JANG , Yong Wook KIM
摘要： A nanoplatelet including a two-dimensional template including a first semiconductor nanocrystal; and a first shell including a second semiconductor nanocrystal disposed on a surface of the two-dimensional template, the second semiconductor nanocrystal having a composition different from the first semiconductor nanocrystal, wherein the second semiconductor nanocrystal includes a Group III-V compound, and wherein the nanoplatelet does not include cadmium.
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公开(公告)号：US20180033856A1
公开(公告)日：2018-02-01
申请号：US15659758
申请日：2017-07-26
发明人： Soo Kyung KWON , Yongwook KIM , Eun Joo JANG , Jihyun MIN
摘要： A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.
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公开(公告)号：US20170088775A1
公开(公告)日：2017-03-30
申请号：US15251643
申请日：2016-08-30
发明人： Garam PARK , Eun Joo JANG , Yongwook KIM , Jihyun MIN , Hyo Sook JANG , Shin Ae JUN , Taekhoon KIM , Yuho WON
CPC分类号： C09K11/883 , B82Y20/00 , C09K11/02 , C09K11/70 , Y10S977/774 , Y10S977/95
摘要： A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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6.发明公开公开(公告)号：US20230220279A1
公开(公告)日：2023-07-13
申请号：US18182428
申请日：2023-03-13
发明人： Jihyun MIN , Sungwoo HWANG , Yong Wook Kim , Ji-Yeong Kim , Soo Kyung KWON , Seon-Yeong Kim
CPC分类号： C09K11/883 , H10K59/38 , H10K50/115 , C09K11/565 , C01G9/08 , C01B19/00 , H10K59/12 , C01P2006/60 , B82Y40/00 , G02B6/005 , C01P2002/74 , B82Y20/00
摘要： A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.
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公开(公告)号：US20210395605A1
公开(公告)日：2021-12-23
申请号：US17462428
申请日：2021-08-31
发明人： Jihyun MIN , Eun Joo JANG , Yongwook KIM , Garam PARK
摘要： A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers
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公开(公告)号：US20210371734A1
公开(公告)日：2021-12-02
申请号：US17401410
申请日：2021-08-13
发明人： Soo Kyung KWON , Yong Wook KIM , Jihyun MIN , Eun Joo JANG
IPC分类号： C09K11/02 , C09K11/62 , H01L51/50 , G02F1/13357
摘要： A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.-
9.发明申请公开(公告)号：US20210115333A1
公开(公告)日：2021-04-22
申请号：US17072440
申请日：2020-10-16
发明人： Jihyun MIN , Sungwoo HWANG , Yong Wook Kim , Ji-Yeong Kim , Soo Kyung KWON , Seon-Yeong Kim
摘要： A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.
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公开(公告)号：US20190225883A1
公开(公告)日：2019-07-25
申请号：US16254676
申请日：2019-01-23
发明人： Jihyun MIN , Eun Joo JANG , Hyo Sook JANG , Ankit JAIN , Edward SARGENT , Oleksandr VOZNYY , Larissa LEVINA , Sjoerd HOOGLAND , Petar Todorovic , Makhsud SAIDAMINOV
摘要： A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3 Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.
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