发明公开
- 专利标题: Patterning Interconnects and Other Structures by Photo-Sensitizing Method
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申请号: US18309131申请日: 2023-04-28
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公开(公告)号: US20230268224A1公开(公告)日: 2023-08-24
- 发明人: Wei-Jen Lo , Po-Cheng Shih , Syun-Ming Jang , Tze-Liang Lee
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/027 ; G03F7/20 ; G03F7/038 ; G03F7/039
摘要:
A representative method includes forming a photo-sensitive material over a substrate, and forming a cap layer over the photo-sensitive material, and patterning the cap layer. Using the patterned cap layer, a first portion of the photo-sensitive material is selectively exposed to a pre-selected light wavelength to change at least one material property of the first portion of the photo-sensitive material, while preventing a second portion of the photo-sensitive material from being exposed to the pre-selected light wavelength. One, but not both of the following steps is then conducted: removing the first portion of the photo-sensitive material and forming in its place a conductive element at least partially surrounded by the second portion of the photo-sensitive material, or removing the second portion of the photo-sensitive material and forming from the first portion of the photo-sensitive material a conductive element electrically connecting two or more portions of a circuit.
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