Invention Publication
- Patent Title: MEMORY DEVICE WHICH GENERATES OPERATION VOLTAGES IN PARALLEL WITH RECEPTION OF AN ADDRESS
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Application No.: US18205915Application Date: 2023-06-05
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Publication No.: US20230317177A1Publication Date: 2023-10-05
- Inventor: Akio SUGAHARA , Takaya HANDA , Ryosuke ISOMURA , Kazuto UEHARA , Junichi SATO , Norichika ASAOKA , Masashi YAMAOKA , Bushnaq SANAD , Yuzuru SHIBAZAKI , Noriyasu KUMAZAKI , Yuri TERADA
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP 18241544 2018.12.25
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C16/04 ; G11C16/32 ; G11C16/08

Abstract:
A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array, and a control circuit controlling operations of the memory cell array. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.
Public/Granted literature
- US12159677B2 Memory device which generates operation voltages in parallel with reception of an address Public/Granted day:2024-12-03
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