Invention Publication
- Patent Title: THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A DUMMY WORD LINE WITH TAPERED CORNER AND METHOD OF MAKING THE SAME
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Application No.: US17715662Application Date: 2022-04-07
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Publication No.: US20230328981A1Publication Date: 2023-10-12
- Inventor: Nobuyuki Fujimura , Shunsuke Takuma , Takashi Kudo , Satoshi Shimizu , Zhixin Cui
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11519 ; H01L27/11524 ; H01L27/11526 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157 ; H01L27/11573
Abstract:
A memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a substrate, a memory opening vertically extending through the first alternating stack and having a tapered sidewall surface at a level of one of the first electrically conductive layers, and a memory opening fill structure located in the memory opening and comprising a vertical stack of memory elements and a vertical semiconductor channel. One of the first electrically conductive layers includes a taper-containing electrically conductive layer that is located at a level of the lateral protrusion of the memory opening and has a contoured sidewall having a tapered sidewall segment that is parallel to the tapered sidewall surface of the lateral protrusion.
Information query
IPC分类:
