- 专利标题: PROCESS FOR TRANSFERRING A THIN LAYER TO A SUPPORT SUBSTRATE THAT HAVE DIFFERENT THERMAL EXPANSION COEFFICIENTS
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申请号: US18348940申请日: 2023-07-07
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公开(公告)号: US20230353115A1公开(公告)日: 2023-11-02
- 发明人: Isabelle Huyet , Cèdric Charles-Alfred , Didier Landru , Alexis Drouin
- 申请人: Soitec
- 申请人地址: FR Bemin
- 专利权人: Soitec
- 当前专利权人: Soitec
- 当前专利权人地址: FR Bemin
- 优先权: FR 56116 2017.06.30
- 主分类号: H03H3/10
- IPC分类号: H03H3/10 ; H10N30/072 ; H10N30/853
摘要:
A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
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