- 专利标题： METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
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申请号： US17390694申请日： 2021-07-30
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公开(公告)号： US20230037117A1公开(公告)日： 2023-02-02
- 发明人: Bo Hua CHEN , Yan Ting SHEN , Tsung Chi WU , Tai-Hung KUO
- 申请人： Advanced Semiconductor Engineering, Inc.
- 申请人地址： TW Kaohsiung
- 专利权人： Advanced Semiconductor Engineering, Inc.
- 当前专利权人： Advanced Semiconductor Engineering, Inc.
- 当前专利权人地址： TW Kaohsiung
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/268
摘要：
A method of manufacturing a semiconductor structure is provided. The method includes the following operations: providing a semiconductor substrate; performing a first cutting operation along a first set of cutting lines of the semiconductor substrate; and performing a second cutting operation along a second set of cutting lines of the semiconductor substrate later than performing the first cutting operation, wherein the second set of cutting lines are arranged interlacedly with the first set of cutting lines along a first direction.
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