公开(公告)号：US20230037117A1

公开(公告)日：2023-02-02

申请号：US17390694

申请日：2021-07-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo Hua CHEN ,  Yan Ting SHEN ,  Tsung Chi WU ,  Tai-Hung KUO

IPC: H01L21/78 ,  H01L21/268

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes the following operations: providing a semiconductor substrate; performing a first cutting operation along a first set of cutting lines of the semiconductor substrate; and performing a second cutting operation along a second set of cutting lines of the semiconductor substrate later than performing the first cutting operation, wherein the second set of cutting lines are arranged interlacedly with the first set of cutting lines along a first direction.