公开(公告)号：US20230197487A1

公开(公告)日：2023-06-22

申请号：US18112466

申请日：2023-02-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo Hua CHEN ,  Yan Ting SHEN ,  Fu Tang CHU ,  Wen-Pin HUANG

IPC: H01L21/673 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L21/67346 ,  H01L23/562 ,  H01L21/78

Abstract: A wafer supporting mechanism and a method for wafer dicing are provided. The wafer supporting mechanism includes a base portion and a support portion. The base portion includes a first gas channel and a first outlet connected to the first gas channel. The support portion is connected to the base portion and including a second gas channel connected to the first gas channel. An accommodation space is defined by the base portion and the support portion.

公开(公告)号：US20210151342A1

公开(公告)日：2021-05-20

申请号：US16685900

申请日：2019-11-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yan Ting SHEN ,  Bo Hua CHEN ,  Fu Tang CHU ,  Wen Han YANG

IPC: H01L21/683 ,  H01L21/768 ,  H01L21/02

Abstract: A method of processing a semiconductor wafer is provided. The method includes providing a semiconductor wafer having a front side and a back side, the semiconductor wafer provided with a circuit layer at the front side and a patterned surface at the back side, forming a sacrificial layer on the back side, mounting a tape on the sacrificial layer, the sacrificial layer isolating the patterned surface from the tape, wherein adhesion strength between the sacrificial layer and the patterned surface is larger than that between the sacrificial layer and the tape, dicing the semiconductor wafer at the back side through the tape, defining individual chips on the semiconductor wafer, and expanding the tape to separate the chips from each other.

公开(公告)号：US20230037117A1

公开(公告)日：2023-02-02

申请号：US17390694

申请日：2021-07-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo Hua CHEN ,  Yan Ting SHEN ,  Tsung Chi WU ,  Tai-Hung KUO

IPC: H01L21/78 ,  H01L21/268

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes the following operations: providing a semiconductor substrate; performing a first cutting operation along a first set of cutting lines of the semiconductor substrate; and performing a second cutting operation along a second set of cutting lines of the semiconductor substrate later than performing the first cutting operation, wherein the second set of cutting lines are arranged interlacedly with the first set of cutting lines along a first direction.

公开(公告)号：US20220102176A1

公开(公告)日：2022-03-31

申请号：US17060003

申请日：2020-09-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Bo Hua CHEN ,  Yan Ting SHEN ,  Fu Tang CHU ,  Wen-Pin HUANG

IPC: H01L21/673 ,  H01L21/78 ,  H01L23/00

Abstract: A wafer supporting mechanism and a method for wafer dicing are provided. The wafer supporting mechanism includes a base portion and a support portion. The base portion includes a first gas channel and a first outlet connected to the first gas channel. The support portion is connected to the base portion and including a second gas channel connected to the first gas channel. An accommodation space is defined by the base portion and the support portion.