公开(公告)号：US20240109768A1

公开(公告)日：2024-04-04

申请号：US18536010

申请日：2023-12-11

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chieh-An YEH ,  Tai-Hung KUO

IPC分类号： B81B7/00 ,  B81C1/00 ,  G01D11/24

CPC分类号： B81B7/0058 ,  B81C1/00904 ,  G01D11/245 ,  B81B2207/012 ,  B81B2207/098

摘要： A sensor device package and method of manufacturing the same are provided. The sensor device package includes a carrier, a sensor component, an encapsulation layer and a protection film. The sensor component is disposed on the carrier, and the sensor component includes an upper surface and edges. The encapsulation layer is disposed on the carrier and encapsulates the edges of the sensor component. The protection film covers at least a portion of the upper surface of the sensor component.

公开(公告)号：US20210246015A1

公开(公告)日：2021-08-12

申请号：US16783914

申请日：2020-02-06

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chieh-An YEH ,  Tai-Hung KUO

IPC分类号： B81B7/00 ,  B81C1/00 ,  G01D11/24

摘要： A sensor device package and method of manufacturing the same are provided. The sensor device package includes a carrier, a sensor component, an encapsulation layer and a protection film. The sensor component is disposed on the carrier, and the sensor component includes an upper surface and edges. The encapsulation layer is disposed on the carrier and encapsulates the edges of the sensor component. The protection film covers at least a portion of the upper surface of the sensor component.

公开(公告)号：US20200312730A1

公开(公告)日：2020-10-01

申请号：US16372107

申请日：2019-04-01

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Yu-Ming CHEN ,  Yu-Sung LIN ,  Tai-Hung KUO

IPC分类号： H01L23/04 ,  H01L21/48 ,  H01L23/544

摘要： A semiconductor package structure includes a substrate, a semiconductor sensor, a lid and an air-permeable film. The semiconductor sensor is disposed on the substrate. The lid covers the semiconductor sensor and defines a through hole. The air-permeable film covers the through hole of the lid and has a first surface. The first surface is hydrophilic.

公开(公告)号：US20230037117A1

公开(公告)日：2023-02-02

申请号：US17390694

申请日：2021-07-30

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Bo Hua CHEN ,  Yan Ting SHEN ,  Tsung Chi WU ,  Tai-Hung KUO

IPC分类号： H01L21/78 ,  H01L21/268

摘要： A method of manufacturing a semiconductor structure is provided. The method includes the following operations: providing a semiconductor substrate; performing a first cutting operation along a first set of cutting lines of the semiconductor substrate; and performing a second cutting operation along a second set of cutting lines of the semiconductor substrate later than performing the first cutting operation, wherein the second set of cutting lines are arranged interlacedly with the first set of cutting lines along a first direction.

公开(公告)号：US20210249371A1

公开(公告)日：2021-08-12

申请号：US16786590

申请日：2020-02-10

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Jia-Zhe LEE ,  Tai-Hung KUO

IPC分类号： H01L23/00 ,  B81C1/00 ,  B81B7/02 ,  C09J183/04 ,  C09J127/22

摘要： A semiconductor device package includes a substrate, a lid, a MEMS device and a gel. The lid is disposed on the substrate and defines a cavity together with the substrate. The MEMS device is disposed in the cavity. The gel covers the MEMS component. The lid is attached to the substrate through a silicone-based adhesive.

公开(公告)号：US20210130166A1

公开(公告)日：2021-05-06

申请号：US16670493

申请日：2019-10-31

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Chieh-An YEH ,  Tai-Hung KUO

IPC分类号： B81B7/00 ,  B81C1/00

摘要： A stacked structure includes a polymer layer and a metal layer. The metal layer is disposed on the polymer layer. A burr length on a surface of the polymer layer is about 0.8 μm to about 150 μm, and a burr length on a surface of the metal layer is about 0.8 μm to about 7 μm.