A method including forming an oxide layer on a first substrate and forming a second substrate on the oxide layer. Doping a first section of the second substrate while not doping a second section of the second substrate. Forming a first nano device on the second section of the second substrate and forming a second nano device on first section of the second substrate. Flipping the first substrate over to allow for backside processing of the substrate and forming at least one backside contact connected to the first nano device while backside contacts are not formed or connected to the second nano device.