- 专利标题: 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING
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申请号: US18228675申请日: 2023-08-01
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公开(公告)号: US20230386886A1公开(公告)日: 2023-11-30
- 发明人: Zvi Or-Bach , Brian Cronquist , Deepak C. Sekar
- 申请人: Monolithic 3D Inc.
- 申请人地址: US OR Klamath Falls
- 专利权人: Monolithic 3D Inc.
- 当前专利权人: Monolithic 3D Inc.
- 当前专利权人地址: US OR Klamath Falls
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; H01L21/74 ; H01L21/762 ; H01L21/768 ; H01L21/822 ; H01L21/8238 ; H01L21/84 ; H01L23/48 ; H01L23/525 ; H01L27/02 ; H01L27/06 ; H01L27/092 ; H01L27/10 ; H01L27/105 ; H01L27/118 ; H01L27/12 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; G11C8/16 ; H10B10/00 ; H10B12/00 ; H10B20/00 ; H10B41/20 ; H10B41/40 ; H10B41/41 ; H10B43/20 ; H10B43/40
摘要:
A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where each of the first transistors includes a single crystal channel; first metal layers interconnecting at least the first transistors; a second metal layer overlaying the first metal layers; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where at least one of the second transistors includes a transistor channel, where the at least one of the second transistors transistor channel includes non-silicon atoms, where the second level is directly bonded to the first level, and where the bonded includes direct oxide-to-oxide bonds.
公开/授权文献
- US11830757B1 3D semiconductor device and structure with bonding 公开/授权日:2023-11-28
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