发明公开
- 专利标题: CAPACITOR, AND DEVICE COMPRISING THE SAME, AND METHOD OF PREPARING THE SAME
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申请号: US18312383申请日: 2023-05-04
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公开(公告)号: US20230402497A1公开(公告)日: 2023-12-14
- 发明人: Hyungjun KIM , Boeun PARK , Jeongil BANG , Cheheung KIM , Jooho LEE
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20220071036 2022.06.10 KR 20220163246 2022.11.29
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01G4/10
摘要:
A capacitor may include a first thin-film electrode layer; a second thin-film electrode layer; and a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer. The first thin-film electrode layer and the second thin-film electrode layer may include a conductive perovskite-type crystal structure. The dielectric layer may include a metal oxide having a dielectric perovskite-type crystal structure. The dielectric layer may be an epitaxial layer. The metal oxide may include a first element in a cubooctahedral site, a second element in an octahedral site, and a third element in an octahedral site. A valency of the third element may be lower than a valency of the second element, and the third element may be a dopant.
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