-
公开(公告)号：US20230022629A1
公开(公告)日：2023-01-26
申请号：US17702155
申请日：2022-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boeun PARK , Yongsung KIM , Jeonggyu SONG , Jooho LEE
IPC: H01L49/02 , H01L27/11502
Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
-
公开(公告)号：US20240363679A1
公开(公告)日：2024-10-31
申请号：US18765887
申请日：2024-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boeun PARK , Yongsung KIM , Jeonggyu SONG , Jooho LEE
Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
-
公开(公告)号：US20230178584A1
公开(公告)日：2023-06-08
申请号：US17841035
申请日：2022-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjun KIM , Yong-Hee CHO , Yongsung KIM , Boeun PARK , Jeongil BANG , Jooho LEE
IPC: H01L49/02 , H01L27/108 , H01L31/0216 , C23C16/455 , C23C14/08 , C23C16/06 , C23C14/34 , C23C28/00
CPC classification number: H01L28/56 , H01L27/10808 , H01L31/02167 , C23C16/45527 , C23C14/088 , C23C16/06 , C23C14/3414 , C23C28/32 , C23C28/3455
Abstract: Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.
-
公开(公告)号：US20230320078A1
公开(公告)日：2023-10-05
申请号：US18331493
申请日：2023-06-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho LEE , Boeun PARK , Yongsung KIM , Jooho LEE
CPC classification number: H10B12/37 , H01L28/56 , G11C11/221 , G11C11/223 , G11C11/2275 , H01L29/516 , G01G7/00 , G01G7/06 , G11C19/005 , G11C19/18 , H10B12/33
Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:
V
MAX
=
(
1
+
❘
"\[LeftBracketingBar]"
Z
2
❘
"\[RightBracketingBar]"
❘
"\[LeftBracketingBar]"
Z
1
❘
"\[RightBracketingBar]"
)
t
F
E
FM
where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.-
公开(公告)号：US20220140067A1
公开(公告)日：2022-05-05
申请号：US17334030
申请日：2021-05-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeonggyu SONG , Younsoo KIM , Haeryong KIM , Boeun PARK , Eunha LEE , Jooho LEE , Hyangsook LEE , Yong-Hee CHO , Eunae CHO
Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.
-
Patent Agency Ranking
公开(公告)号：US20210358694A1
公开(公告)日：2021-11-18
申请号：US17116097
申请日：2020-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho LEE , Boeun PARK , Yongsung KIM , Jooho LEE
Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: V MAX = ( 1 + Z 2 Z 1 ) t F E FM where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.
-
公开(公告)号：US20240213303A1
公开(公告)日：2024-06-27
申请号：US18347938
申请日：2023-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boeun PARK , Haeryong KIM , Euncheol DO , Cheheung KIM , Jooho LEE
CPC classification number: H01L28/56 , H01G4/085 , H01G4/33 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/94 , H10B12/31 , H01G4/008
Abstract: Provided is a capacitor, a semiconductor device including the same, and an electronic apparatus including the semiconductor device, wherein the capacitor includes a first electrode including a first metal ion, a second electrode arranged spaced apart from the first electrode, a dielectric layer provided between the first electrode and the second electrode, and an interfacial layer provided between the first electrode and the dielectric layer and including a compound represented by MxOyNz, in which a diffusion energy barrier value of M is equal to or greater than a diffusion energy barrier value of the first metal ion.
-
8.发明公开公开(公告)号：US20230420487A1
公开(公告)日：2023-12-28
申请号：US18462909
申请日：2023-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho LEE , Boeun PARK , Younggeun PARK , Jooho LEE
CPC classification number: H01L28/56 , H01L23/66 , H01L28/75 , H01L2223/6661
Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
-
公开(公告)号：US20220140066A1
公开(公告)日：2022-05-05
申请号：US17307592
申请日：2021-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho LEE , Boeun PARK , Younggeun PARK , Jooho LEE
IPC: H01L49/02
Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
-
10.发明申请公开(公告)号：US20210328004A1
公开(公告)日：2021-10-21
申请号：US17098915
申请日：2020-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho LEE , Boeun PARK , Younggeun PARK , Jooho LEE
Abstract: Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.015 seconds)
