- 专利标题: SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE REGULATION METHOD
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申请号: US18210318申请日: 2023-06-15
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公开(公告)号: US20230416919A1公开(公告)日: 2023-12-28
- 发明人: Tatsuya WATANABE , Yuichi TAKENAGA
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 优先权: JP 22103981 2022.06.28
- 主分类号: C23C16/46
- IPC分类号: C23C16/46 ; C23C16/52
摘要:
A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.
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