公开(公告)号：US20220406631A1

公开(公告)日：2022-12-22

申请号：US17805952

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Tatsuya WATANABE ,  Yuichi TAKENAGA

IPC: H01L21/67

Abstract: A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.

公开(公告)号：US20230416919A1

公开(公告)日：2023-12-28

申请号：US18210318

申请日：2023-06-15

Applicant: Tokyo Electron Limited

Inventor： Tatsuya WATANABE ,  Yuichi TAKENAGA

IPC: C23C16/46 ,  C23C16/52

CPC classification number: C23C16/46 ,  C23C16/52

Abstract: A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.

公开(公告)号：US20220392814A1

公开(公告)日：2022-12-08

申请号：US17828487

申请日：2022-05-31

Applicant: Tokyo Electron Limited

Inventor： Tatsuya WATANABE ,  Yuichi Takenaga

IPC: H01L21/66 ,  H01L21/67

Abstract: A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

公开(公告)号：US20250051922A1

公开(公告)日：2025-02-13

申请号：US18795054

申请日：2024-08-05

Applicant: Tokyo Electron Limited

Inventor： Hisashi INOUE ,  Tatsuya YAMAGUCHI ,  Noriaki KOYAMA ,  Yuichi TAKENAGA ,  Tatsuya WATANABE

IPC: C23C16/46 ,  C23C16/52

Abstract: A temperature control method includes providing a substrate processing apparatus including a processing container, and a heater that heats the processing container; setting an amount of temperature change with respect to a target temperature having a value up to a second digit smaller than a first digit indicating a control limit value of the heater; dividing the amount of temperature change into a first temperature equal to or greater than the first digit and a second temperature less than the first digit, and calculating a ratio of dividing a time segmented by a digit difference between the first digit and the second digit, into a first time corresponding to the second temperature and a second time other than the first time; and controlling the heater to raise or lower a temperature in times before and after dividing a processing time in a processing step at the ratio.

公开(公告)号：US20240014054A1

公开(公告)日：2024-01-11

申请号：US18217918

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Tatsuya WATANABE ,  Yuichi TAKENAGA

IPC: H01L21/67 ,  C23C16/46

CPC classification number: H01L21/67248 ,  C23C16/46

Abstract: A substrate processing apparatus includes: a processing container, a temperature adjustment furnace, and a controller. The temperature controller includes at least one of a ceiling heater heating the processing container from a ceiling and a lower heater heating a portion below the processing container. The controller calculates a temperature condition for each of the plurality of zones to uniformize a film thickness among the plurality of substrates during the substrate processing, by using a retained upper-portion temperature model and/or lower-portion temperature model, acquires the film thickness of the plurality of substrates when the substrate processing is performed under the calculated temperature condition, and compares the acquired film thickness with a target film thickness, and when the acquired film thickness falls outside an allowable range of the target film thickness, sets a process region to be applied to the substrate processing on the plurality of substrates, based on the comparison.

公开(公告)号：US20240404849A1

公开(公告)日：2024-12-05

申请号：US18668806

申请日：2024-05-20

Applicant: Tokyo Electron Limited

Inventor： Tatsuya WATANABE ,  Yuichi TAKENAGA ,  Shota YAMAZAKI ,  Youngtai KANG

IPC: H01L21/67 ,  H01L21/673

Abstract: A substrate processing system includes a substrate processing apparatus including a processing container and a boat for transferring a plurality of substrates into the processing container; a measuring device that measures a substrate processing result of a substrate in the substrate processing apparatus; and an information processing device that estimates substrate processing results at a plurality of points on the substrate, based on the substrate processing result. The information processing device of the substrate processing system includes an input unit that inputs summary data extracted from the substrate processing result measured by the measuring device, a calculation unit that calculates a plurality of estimated values indicating the substrate processing results at the plurality of points on the substrate based on the summary data; and a display control unit that displays the plurality of estimated values on a display device.