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公开(公告)号：US20220406631A1
公开(公告)日：2022-12-22
申请号：US17805952
申请日：2022-06-08
发明人： Tatsuya WATANABE , Yuichi TAKENAGA
IPC分类号： H01L21/67
摘要： A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.
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公开(公告)号：US20230416919A1
公开(公告)日：2023-12-28
申请号：US18210318
申请日：2023-06-15
发明人： Tatsuya WATANABE , Yuichi TAKENAGA
摘要： A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.
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公开(公告)号：US20220392814A1
公开(公告)日：2022-12-08
申请号：US17828487
申请日：2022-05-31
发明人： Tatsuya WATANABE , Yuichi Takenaga
摘要： A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.
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公开(公告)号：US20240014054A1
公开(公告)日：2024-01-11
申请号：US18217918
申请日：2023-07-03
发明人： Tatsuya WATANABE , Yuichi TAKENAGA
CPC分类号： H01L21/67248 , C23C16/46
摘要： A substrate processing apparatus includes: a processing container, a temperature adjustment furnace, and a controller. The temperature controller includes at least one of a ceiling heater heating the processing container from a ceiling and a lower heater heating a portion below the processing container. The controller calculates a temperature condition for each of the plurality of zones to uniformize a film thickness among the plurality of substrates during the substrate processing, by using a retained upper-portion temperature model and/or lower-portion temperature model, acquires the film thickness of the plurality of substrates when the substrate processing is performed under the calculated temperature condition, and compares the acquired film thickness with a target film thickness, and when the acquired film thickness falls outside an allowable range of the target film thickness, sets a process region to be applied to the substrate processing on the plurality of substrates, based on the comparison.
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