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公开(公告)号：US20230416919A1
公开(公告)日：2023-12-28
申请号：US18210318
申请日：2023-06-15
Applicant: Tokyo Electron Limited
Inventor： Tatsuya WATANABE , Yuichi TAKENAGA
Abstract: A substrate processing apparatus includes: a processing container, a temperature adjustment unit, and a controller. The controller includes a calculation unit that calculates a correction temperature for uniformizing a film thickness within a plane of each substrate, a first temperature change amount calculation unit that calculates a first temperature change amount based on the correction temperature and a thermal model, a second temperature change amount calculation unit that calculates a second temperature change amount based on a simulation of a temperature sequence using the calculated correction temperature, a temperature comparison unit that calculates a temperature difference between the first and second temperature change amounts, a film thickness information calculation unit that calculates information on a film thickness, and a temperature regulation information calculation unit that calculates temperature regulation information to uniformize a film thickness for each of a plurality of zones based on the information on the film thickness.
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公开(公告)号：US20170271218A1
公开(公告)日：2017-09-21
申请号：US15459553
申请日：2017-03-15
Applicant: Tokyo Electron Limited
Inventor： Yuichi TAKENAGA , Takahito KASAI
IPC: H01L21/66 , C23C16/52 , C23C16/455 , H01L21/67
CPC classification number: H01L22/26 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/67069 , H01L21/67253 , H01L21/67288 , H01L22/12 , H01L22/20
Abstract: Provided is a control device for controlling an operation of a substrate processing apparatus that performs a predetermined processing on a substrate. The control device includes: a recipe storing unit that stores conditions of the predetermined processing including a first condition and a second condition different from the first condition; and a controller that determines, in a first processing performed on the substrate under the first condition and a second processing performed on the substrate under the second condition after the first processing, whether a result of the first processing or a result of the second processing is abnormal based on the result of the second processing and a result predicted from a relationship between the first condition and the second condition.
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公开(公告)号：US20250051922A1
公开(公告)日：2025-02-13
申请号：US18795054
申请日：2024-08-05
Applicant: Tokyo Electron Limited
Inventor： Hisashi INOUE , Tatsuya YAMAGUCHI , Noriaki KOYAMA , Yuichi TAKENAGA , Tatsuya WATANABE
Abstract: A temperature control method includes providing a substrate processing apparatus including a processing container, and a heater that heats the processing container; setting an amount of temperature change with respect to a target temperature having a value up to a second digit smaller than a first digit indicating a control limit value of the heater; dividing the amount of temperature change into a first temperature equal to or greater than the first digit and a second temperature less than the first digit, and calculating a ratio of dividing a time segmented by a digit difference between the first digit and the second digit, into a first time corresponding to the second temperature and a second time other than the first time; and controlling the heater to raise or lower a temperature in times before and after dividing a processing time in a processing step at the ratio.
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公开(公告)号：US20250046658A1
公开(公告)日：2025-02-06
申请号：US18782981
申请日：2024-07-24
Applicant: Tokyo Electron Limited
Inventor： Hiroyuki KARASAWA , Masakazu YAMAMOTO , Yuichi TAKENAGA , Youngtai KANG , Shota YAMAZAKI
Abstract: A substrate processing method includes providing a substrate processing apparatus including a processing container that accommodates a substrate, and a heater that heats an inside of the processing container; setting a specific section with an in-plane temperature distribution of a substrate that results in a desired outcome of substrate processing based on a first prediction model that predicts a time-dependent change of the in-plane temperature distribution of the substrate after temperature increase or decrease caused by the heater; and performing the substrate processing in the specific section.
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公开(公告)号：US20240014054A1
公开(公告)日：2024-01-11
申请号：US18217918
申请日：2023-07-03
Applicant: Tokyo Electron Limited
Inventor： Tatsuya WATANABE , Yuichi TAKENAGA
CPC classification number: H01L21/67248 , C23C16/46
Abstract: A substrate processing apparatus includes: a processing container, a temperature adjustment furnace, and a controller. The temperature controller includes at least one of a ceiling heater heating the processing container from a ceiling and a lower heater heating a portion below the processing container. The controller calculates a temperature condition for each of the plurality of zones to uniformize a film thickness among the plurality of substrates during the substrate processing, by using a retained upper-portion temperature model and/or lower-portion temperature model, acquires the film thickness of the plurality of substrates when the substrate processing is performed under the calculated temperature condition, and compares the acquired film thickness with a target film thickness, and when the acquired film thickness falls outside an allowable range of the target film thickness, sets a process region to be applied to the substrate processing on the plurality of substrates, based on the comparison.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20220270904A1
公开(公告)日：2022-08-25
申请号：US17684629
申请日：2022-03-02
Applicant: Tokyo Electron Limited
Inventor： Youngtai KANG , Yuichi TAKENAGA
IPC: H01L21/68 , H01L21/673 , H01L21/66 , H01L21/67 , H01L21/677
Abstract: A substrate processing method includes: carrying out a substrate from a substrate transfer container by a substrate transfer device; placing the substrate in a first position of a substrate holder; moving the substrate holder into a reaction container and processing the substrate in the reaction chamber; obtaining a film thickness measurement result of the substrate processed in the reaction container; creating a model from the film thickness measurement result; determining a second position where the substrate is placed in the substrate holder and a transfer position setting value obtained from the model; adjusting the first position of the substrate to the second position; calculating an eccentricity state of the substrate from a newly obtained film thickness measurement result; calculating an optimization such that the eccentricity state is minimized; and determining a third position to which a new substrate is placed from the transfer position setting value.
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公开(公告)号：US20240404849A1
公开(公告)日：2024-12-05
申请号：US18668806
申请日：2024-05-20
Applicant: Tokyo Electron Limited
Inventor： Tatsuya WATANABE , Yuichi TAKENAGA , Shota YAMAZAKI , Youngtai KANG
IPC: H01L21/67 , H01L21/673
Abstract: A substrate processing system includes a substrate processing apparatus including a processing container and a boat for transferring a plurality of substrates into the processing container; a measuring device that measures a substrate processing result of a substrate in the substrate processing apparatus; and an information processing device that estimates substrate processing results at a plurality of points on the substrate, based on the substrate processing result. The information processing device of the substrate processing system includes an input unit that inputs summary data extracted from the substrate processing result measured by the measuring device, a calculation unit that calculates a plurality of estimated values indicating the substrate processing results at the plurality of points on the substrate based on the summary data; and a display control unit that displays the plurality of estimated values on a display device.
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8.发明申请公开(公告)号：US20210134570A1
公开(公告)日：2021-05-06
申请号：US17075869
申请日：2020-10-21
Applicant: Tokyo Electron Limited
Inventor： Shota YAMAZAKI , Yuichi TAKENAGA
IPC: H01J37/32 , H01L21/67 , G05B19/4155 , C23C16/455 , C23C16/52
Abstract: An information processing device includes a storage configured to store a first film thickness model or a first refractive index model defining an amount of change in a film thickness or a refractive index at each position of a first wafer when a film forming processing is performed by changing an output of each of a plurality of plasma sources provided in a film forming device by a predetermined amount and a calculator configured to calculate, based on the first film thickness model or the first refractive index model, a correction value of the output of each of the plurality of plasma sources to achieve a target value of a film thickness or a target value of a refractive index at each position of a second wafer.
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公开(公告)号：US20220406631A1
公开(公告)日：2022-12-22
申请号：US17805952
申请日：2022-06-08
Applicant: Tokyo Electron Limited
Inventor： Tatsuya WATANABE , Yuichi TAKENAGA
IPC: H01L21/67
Abstract: A temperature correction information calculating device for use with a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus is configured to correct a preset temperature in accordance with an accumulated film thickness on an inner wall of the semiconductor manufacturing apparatus, control a temperature by using a heater such that the temperature approaches the corrected preset temperature, and perform a deposition process on an object. The temperature correction information calculating device includes a memory, and a processor coupled to the memory and configured to store a temperature correction value for correcting the preset temperature, obtain first heater power applied to the heater, predict second heater power by adding, to the first heater power, a variation of heater power due to a preset temperature change, and correct the temperature correction value based on the predicted second heater power. The first heater power is included in log information.
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公开(公告)号：US20220244685A1
公开(公告)日：2022-08-04
申请号：US17584712
申请日：2022-01-26
Applicant: Tokyo Electron Limited
Inventor： Yuto NODA , Shota YAMAZAKI , Yuichi TAKENAGA , Toshiyuki FUKUMOTO
Abstract: An information processing device includes: a machine learning model selection part configured to select a machine learning model appropriate for a data set used for learning of the machine learning model; a calculation part configured to perform an optimization calculation by using the selected machine learning model to calculate process conditions that can achieve a target process result, predicted values of a process result corresponding to each of the process conditions, and reliability of the predicted values; a process condition selection part configured to select, among the process conditions that can achieve the target process result, one or more process conditions according to the predicted values of the process result and the reliability of the predicted values; and a display controller configured to display the selected process conditions, the predicted values of the process result corresponding to each of the selected process conditions, and the reliability of the predicted values.
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