- 专利标题： THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
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申请号： US17570091申请日： 2022-01-06
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公开(公告)号： US20230056340A1公开(公告)日： 2023-02-23
- 发明人: Linchun Wu , Kun Zhang , Wenxi Zhou , Zhiliang Xia , Wei Xie , Di Wang , Bingguo Wang , Zongliang Huo
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 优先权： CNPCT/CN2021/114050 20210823
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11556
摘要：
A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. A first thickness of the bottom portion of the channel structure is larger than a second thickness of a top portion of the channel structure.
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